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Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

dc.contributor.authorMortet, Vincent
dc.contributor.authorPernot, J.
dc.contributor.authorJomard, F.
dc.contributor.authorSoltani, A.
dc.contributor.authorRemes, Z.
dc.contributor.authorBarjon, J.
dc.contributor.authorD'Haen, Jan
dc.contributor.authorHaenen, Ken
dc.date.accessioned2021-10-22T21:14:52Z
dc.date.available2021-10-22T21:14:52Z
dc.date.issued2015
dc.identifier.issn0925-9635
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25670
dc.sourceIIOimport
dc.titleProperties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
dc.typeJournal article
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.date.embargo9999-12-31
dc.identifier.doi10.1016/j.diamond.2015.01.006
dc.source.peerreviewyes
dc.source.beginpage29
dc.source.endpage34
dc.source.journalDiamond and Related Materials
dc.source.volume53
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0925963515000187
imec.availabilityPublished - open access


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