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Impact of the low temperature gate dielectrics on device performance and bias-stress stabilities of a-IGZO thin-film transistors

dc.contributor.authorNag, Manoj
dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T21:18:38Z
dc.date.available2021-10-22T21:18:38Z
dc.date.issued2015
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25680
dc.sourceIIOimport
dc.titleImpact of the low temperature gate dielectrics on device performance and bias-stress stabilities of a-IGZO thin-film transistors
dc.typeJournal article
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageN99
dc.source.endpageN101
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue8
dc.source.volume4
dc.identifier.urlhttp://jss.ecsdl.org/content/4/8/N99.full
imec.availabilityPublished - open access


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