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Medium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors

dc.contributor.authorNag, Manoj
dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorSteudel, Soeren
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorMaas, Joris
dc.contributor.authorGenoe, Jan
dc.contributor.authorMurata, Mitsuhiro
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T21:19:03Z
dc.date.available2021-10-22T21:19:03Z
dc.date.issued2015
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25681
dc.sourceIIOimport
dc.titleMedium frequency physical vapor deposited Al2O3 and SiO2 as etch-stop-layers for amorphous Indium-Gallium-Zinc-Oxide thin-film-transistors
dc.typeJournal article
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorMaas, Joris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageQ38
dc.source.endpageQ42
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue5
dc.source.volume4
dc.identifier.urlhttp://jss.ecsdl.org/content/4/5/Q38.abstract?etoc
imec.availabilityPublished - open access


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