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dc.contributor.authorNishio, Kengo
dc.contributor.authorLu, Augustin
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-22T21:24:00Z
dc.date.available2021-10-22T21:24:00Z
dc.date.issued2015
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25694
dc.sourceIIOimport
dc.titleLow-strain Si/O superlattices with tunable electronic properties: Ab initio calculations
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage165303
dc.source.journalPhysical Review B
dc.source.issue16
dc.source.volume91
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.91.165303
imec.availabilityPublished - imec


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