Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs
dc.contributor.author | Fobelets, Kristel | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-09-30T11:57:46Z | |
dc.date.available | 2021-09-30T11:57:46Z | |
dc.date.issued | 1998 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/2575 | |
dc.source | IIOimport | |
dc.title | Influence of the undoped spacer layer thickness on the DC characteristics of n-type GaAs/AlAs MESFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | no | |
dc.source.beginpage | 318 | |
dc.source.endpage | 21 | |
dc.source.journal | Semiconductor Science and Technology | |
dc.source.issue | 3 | |
dc.source.volume | 13 | |
imec.availability | Published - imec |
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