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Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorRoelofs, Robin
dc.contributor.authorWu, Tian-Li
dc.contributor.authorHu, Jie
dc.contributor.authorKang, Xuanwu
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T22:23:15Z
dc.date.available2021-10-22T22:23:15Z
dc.date.issued2015
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25838
dc.sourceIIOimport
dc.titleCombined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
dc.typeJournal article
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage04DF02
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue4S
dc.source.volume54
dc.identifier.urlhttp://iopscience.iop.org/1347-4065/54/4S/04DF02
imec.availabilityPublished - imec


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