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Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

dc.contributor.authorRossetto, Isabella
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBisi, Davide
dc.contributor.authorBarbato, A
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMarcon, Denis
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-22T22:23:42Z
dc.date.available2021-10-22T22:23:42Z
dc.date.issued2015
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25839
dc.sourceIIOimport
dc.titleImpact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1692
dc.source.endpage1696
dc.source.journalMicroelectronics Reliability
dc.source.issue9_10
dc.source.volume55
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271415300780
imec.availabilityPublished - imec
imec.internalnotesPpaer ESREF 2015


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