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Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

dc.contributor.authorSasaki, K.R.A.
dc.contributor.authorManini, M.B.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-22T22:33:08Z
dc.date.available2021-10-22T22:33:08Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25862
dc.sourceIIOimport
dc.titleEnhanced dynamic threshold voltage UTBB SOI nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage19
dc.source.endpage23
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume112
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110115000568
imec.availabilityPublished - open access
imec.internalnotesPaper from EUROSOI 2014


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