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Influence of field-plate configuration on power dissipation and temperature profiles in AlGaN/GaN on silicon HEMTs

dc.contributor.authorSodan, Vice
dc.contributor.authorOprins, Herman
dc.contributor.authorStoffels, Steve
dc.contributor.authorBaelmans, Martine
dc.contributor.authorDe Wolf, Ingrid
dc.date.accessioned2021-10-22T23:02:36Z
dc.date.available2021-10-22T23:02:36Z
dc.date.issued2015-08
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25928
dc.sourceIIOimport
dc.titleInfluence of field-plate configuration on power dissipation and temperature profiles in AlGaN/GaN on silicon HEMTs
dc.typeJournal article
dc.contributor.imecauthorOprins, Herman
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecOprins, Herman::0000-0003-0680-4969
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewyes
dc.source.beginpage2416
dc.source.endpage2422
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7138606&refinements%3D4226708477%26punumber%3D16%26filter%3DAND%28p_I
imec.availabilityPublished - imec


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