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Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm

dc.contributor.authorTripathi, Ashutosh
dc.contributor.authorMyny, Kris
dc.contributor.authorBo, Hou
dc.contributor.authorWezenberg, Kimberley
dc.contributor.authorGelinck, Gerwin
dc.date.accessioned2021-10-22T23:40:04Z
dc.date.available2021-10-22T23:40:04Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26008
dc.sourceIIOimport
dc.titleElectrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm
dc.typeJournal article
dc.contributor.imecauthorMyny, Kris
dc.contributor.orcidimecMyny, Kris::0000-0002-5230-495X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4063
dc.source.endpage4068
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7323805
imec.availabilityPublished - open access


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