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Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors

dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorYou, Shuzhen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T01:10:52Z
dc.date.available2021-10-23T01:10:52Z
dc.date.issued2015
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26195
dc.sourceIIOimport
dc.titleForward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1001
dc.source.endpage1003
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume36
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7180329
imec.availabilityPublished - open access


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