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The limitation and optimization of bottom-up growth mode in through silicon via electroplating

dc.contributor.authorYang, Liu
dc.contributor.authorRadisic, Alex
dc.contributor.authorDeconinck, Johan
dc.contributor.authorVereecken, Philippe
dc.date.accessioned2021-10-23T01:20:07Z
dc.date.available2021-10-23T01:20:07Z
dc.date.issued2015
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26213
dc.sourceIIOimport
dc.titleThe limitation and optimization of bottom-up growth mode in through silicon via electroplating
dc.typeJournal article
dc.contributor.imecauthorRadisic, Alex
dc.contributor.imecauthorVereecken, Philippe
dc.contributor.orcidimecVereecken, Philippe::0000-0003-4115-0075
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageD599
dc.source.endpageD604
dc.source.journalJournal of the Electrochemical Society
dc.source.issue14
dc.source.volume162
dc.identifier.urlhttp://jes.ecsdl.org/content/162/14/D599.full?sid=37180e73-fa95-455b-ae81-4a17a996d13d
imec.availabilityPublished - open access


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