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Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films

dc.contributor.authorZhao, Larry
dc.contributor.authorBarbarin, Yohan
dc.contributor.authorCroes, Kristof
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorTokei, Zsolt
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T01:38:11Z
dc.date.available2021-10-23T01:38:11Z
dc.date.issued2015
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26248
dc.sourceIIOimport
dc.titleImpact of carbon-doping on time dependent dielectric breakdown of SiO2-based films
dc.typeJournal article
dc.contributor.imecauthorCroes, Kristof
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.source.peerreviewyes
dc.source.beginpage72902
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume106
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/106/7/10.1063/1.4913485
imec.availabilityPublished - imec


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