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Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors

dc.contributor.authorAgarwal Kumar, Tarun
dc.contributor.authorSoree, Bart
dc.contributor.authorRadu, Iuliana
dc.contributor.authorRaghavan, Praveen
dc.contributor.authorFiori, Gianluca
dc.contributor.authorIannaccone, Giuseppe
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.authorDehaene, Wim
dc.date.accessioned2021-10-23T10:04:16Z
dc.date.available2021-10-23T10:04:16Z
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26270
dc.sourceIIOimport
dc.titleComparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage23506
dc.source.journalApplied Physics Letters
dc.source.issue2
dc.source.volume108
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/108/2/10.1063/1.4939933
imec.availabilityPublished - open access


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