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dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorBordallo, Caio C. M.
dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorAgopian, P.G.D
dc.contributor.authorMartino, J.A.
dc.contributor.authorThean, Aaron
dc.contributor.authorLin, Dennis
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-23T10:04:30Z
dc.date.available2021-10-23T10:04:30Z
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26282
dc.sourceIIOimport
dc.titleInGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
dc.typeJournal article
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage243502
dc.source.journalApplied Physics Letters
dc.source.issue24
dc.source.volume109
dc.identifier.urlhttp://aip.scitation.org/doi/pdf/10.1063/1.4971830
imec.availabilityPublished - open access


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