dc.contributor.author | Bhoolokam, Ajay | |
dc.contributor.author | Nag, Manoj | |
dc.contributor.author | Steudel, Soeren | |
dc.contributor.author | Genoe, Jan | |
dc.contributor.author | Gelinck, Gerwin | |
dc.contributor.author | Kadashchuk, Andriy | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Heremans, Paul | |
dc.date.accessioned | 2021-10-23T10:07:21Z | |
dc.date.available | 2021-10-23T10:07:21Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 0021-4922 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/26343 | |
dc.source | IIOimport | |
dc.title | Conduction mechanism in amorphous InGaZnO thin film transistors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Nag, Manoj | |
dc.contributor.imecauthor | Genoe, Jan | |
dc.contributor.imecauthor | Kadashchuk, Andriy | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Heremans, Paul | |
dc.contributor.orcidimec | Genoe, Jan::0000-0002-4019-5979 | |
dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
dc.contributor.orcidimec | Heremans, Paul::0000-0003-2151-1718 | |
dc.identifier.doi | 10.7567/JJAP.55.014301 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 14301 | |
dc.source.journal | Japanese Journal of Applied Physics | |
dc.source.issue | 1 | |
dc.source.volume | 55 | |
dc.identifier.url | http://iopscience.iop.org/article/10.7567/JJAP.55.014301 | |
imec.availability | Published - imec | |