Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Nigam, Tanya | |
dc.contributor.author | Mertens, Paul | |
dc.contributor.author | Heyns, Marc | |
dc.date.accessioned | 2021-09-30T12:13:44Z | |
dc.date.available | 2021-09-30T12:13:44Z | |
dc.date.issued | 1998 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/2641 | |
dc.source | IIOimport | |
dc.title | Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown | |
dc.type | Journal article | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Mertens, Paul | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 4351 | |
dc.source.endpage | 4355 | |
dc.source.journal | Journal of Applied Physics | |
dc.source.issue | 8 | |
dc.source.volume | 84 | |
imec.availability | Published - open access |