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Single-electron effects in heavily doped plycrystalline silicon nanowires

dc.contributor.authorIrvine, A. C.
dc.contributor.authorDurrani, Z. A. K.
dc.contributor.authorAhmed, H.
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-09-30T12:14:58Z
dc.date.available2021-09-30T12:14:58Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2646
dc.sourceIIOimport
dc.titleSingle-electron effects in heavily doped plycrystalline silicon nanowires
dc.typeJournal article
dc.contributor.imecauthorBiesemans, Serge
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1113
dc.source.endpage1115
dc.source.journalApplied Physics Letters
dc.source.issue8
dc.source.volume73
imec.availabilityPublished - open access


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