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Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers

dc.contributor.authorComrie, C.M.
dc.contributor.authorMtshali, C.B.
dc.contributor.authorSechogela, P.T.
dc.contributor.authorSantos, N.M.
dc.contributor.authorVan Stiphout, K.
dc.contributor.authorLoo, Roger
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-23T10:21:39Z
dc.date.available2021-10-23T10:21:39Z
dc.date.issued2016-10
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26470
dc.sourceIIOimport
dc.titleInterplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage145303
dc.source.journalJournal of Applied Physics
dc.source.issue14
dc.source.volume120
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/120/14/10.1063/1.4964692
imec.availabilityPublished - imec


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