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Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation

dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorHogg, S.
dc.contributor.authorPattyn, H.
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-09-30T12:17:07Z
dc.date.available2021-09-30T12:17:07Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2654
dc.sourceIIOimport
dc.titleGrowth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage189
dc.source.endpage194
dc.source.journalJournal of Crystal Growth
dc.source.issue2
dc.source.volume194
imec.availabilityPublished - open access


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