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Band offsets in biaxially stressed SiGe layers for arbitrary orientations

dc.contributor.authorEneman, Geert
dc.contributor.authorRoussel, Philippe
dc.contributor.authorBrunco, David
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T10:45:33Z
dc.date.available2021-10-23T10:45:33Z
dc.date.issued2016
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26601
dc.sourceIIOimport
dc.titleBand offsets in biaxially stressed SiGe layers for arbitrary orientations
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage54502
dc.source.journalJournal of Applied Physics
dc.source.issue5
dc.source.volume120
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/120/5/10.1063/1.4960140
imec.availabilityPublished - open access


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