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Thermal stability and relaxation mechanisms in compressively-strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

dc.contributor.authorFleischmann, Claudia
dc.contributor.authorLieten, Ruben
dc.contributor.authorHermann, Peter
dc.contributor.authorHoenicke, Philipp
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorSeidel, Felix
dc.contributor.authorDouhard, Bastien
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorShimura, Yosuke
dc.contributor.authorZaima, S
dc.contributor.authorUchida, Nori
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-23T10:50:49Z
dc.date.available2021-10-23T10:50:49Z
dc.date.issued2016
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26624
dc.sourceIIOimport
dc.titleThermal stability and relaxation mechanisms in compressively-strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy
dc.typeJournal article
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorSeidel, Felix
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage85309
dc.source.journalJournal of Applied Physics
dc.source.issue5
dc.source.volume120
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/120/8/10.1063/1.4961396
imec.availabilityPublished - open access


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