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dc.contributor.authorGupta, Somya
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLoo, Roger
dc.contributor.authorMadia, Oreste
dc.contributor.authorLin, Dennis
dc.contributor.authorMerckling, Clement
dc.contributor.authorShimura, Yosuke
dc.contributor.authorConard, Thierry
dc.contributor.authorLauwaert, Johan
dc.contributor.authorVrielinck, Henk
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-23T11:03:59Z
dc.date.available2021-10-23T11:03:59Z
dc.date.issued2016-05
dc.identifier.issn1944-8244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26676
dc.sourceIIOimport
dc.titleDensity and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMadia, Oreste
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewyes
dc.source.beginpage13181
dc.source.endpage13186
dc.source.journalACS Applied Materials & Interfaces
dc.source.issue21
dc.source.volume8
dc.identifier.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.6b01582
imec.availabilityPublished - imec


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