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Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMannaert, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-23T11:16:16Z
dc.date.available2021-10-23T11:16:16Z
dc.date.issued2016-03
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26725
dc.sourceIIOimport
dc.titleProperties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage72
dc.source.endpage77
dc.source.journalThin Solid Films
dc.source.volume602
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0040609015009682
imec.availabilityPublished - imec


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