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Sub-10 nm low current resistive switching behavior in hafnium oxide stack

dc.contributor.authorHou, Yi
dc.contributor.authorCelano, Umberto
dc.contributor.authorGoux, Ludovic
dc.contributor.authorLiu, L.
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorYoussef, Ahmed
dc.contributor.authorXu, Zheng
dc.contributor.authorCheng, Y.
dc.contributor.authorKang, J.
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-23T11:20:34Z
dc.date.available2021-10-23T11:20:34Z
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26740
dc.sourceIIOimport
dc.titleSub-10 nm low current resistive switching behavior in hafnium oxide stack
dc.typeJournal article
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage123106
dc.source.journalApplied Physics Letters
dc.source.issue12
dc.source.volume108
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/108/12/10.1063/1.4944841
imec.availabilityPublished - open access


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