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Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)

dc.contributor.authorHsu, Mark
dc.contributor.authorMerckling, Clement
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorAbsil, Philippe
dc.contributor.authorVan Thourhout, Dries
dc.date.accessioned2021-10-23T11:21:10Z
dc.date.available2021-10-23T11:21:10Z
dc.date.issued2016
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26742
dc.sourceIIOimport
dc.titleDiffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001)
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage225114
dc.source.journalJournal of Applied Physics
dc.source.issue22
dc.source.volume120
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.4972101
imec.availabilityPublished - open access


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