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Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate

dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLiang, Hu
dc.contributor.authorZhao, Ming
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T11:21:59Z
dc.date.available2021-10-23T11:21:59Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26745
dc.sourceIIOimport
dc.titlePerformance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage997
dc.source.endpage1004
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume63
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7387770
imec.availabilityPublished - imec


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