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Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T11:23:28Z
dc.date.available2021-10-23T11:23:28Z
dc.date.issued2016
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26750
dc.sourceIIOimport
dc.titleLeakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1229
dc.source.endpage1235
dc.source.journalPhysica Status Solidi A
dc.source.issue5
dc.source.volume213
dc.identifier.url10.1002/pssa.201532797
imec.availabilityPublished - imec


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