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Hydrogen induced dipole at the Pt/oxide interface in MOS devices

dc.contributor.authorKolomiiets, N.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorOpsomer, Karl
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-23T11:51:57Z
dc.date.available2021-10-23T11:51:57Z
dc.date.issued2016
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26843
dc.sourceIIOimport
dc.titleHydrogen induced dipole at the Pt/oxide interface in MOS devices
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewyes
dc.source.beginpage260
dc.source.endpage264
dc.source.journalPhysica Status Solidi A
dc.source.issue2
dc.source.volume213
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201532413/abstract
imec.availabilityPublished - imec


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