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Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO2

dc.contributor.authorKolomiiets, Nadiia
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorMadia, Oreste
dc.contributor.authorCott, Daire
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-23T11:52:17Z
dc.date.available2021-10-23T11:52:17Z
dc.date.issued2016
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26844
dc.sourceIIOimport
dc.titleEffect of La doping on interface barrier between Si-passivated Ge and insulating HfO2
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorMadia, Oreste
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage855
dc.source.endpage859
dc.source.journalPhysica Status Solidi C
dc.source.issue10_12
dc.source.volume13
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201600105/full
imec.availabilityPublished - imec
imec.internalnotesSpecial Issue E-MRS 2016 Spring Meeting


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