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Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

dc.contributor.authorLu, Augustin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorAgarwal, Saurabh
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-23T12:21:35Z
dc.date.available2021-10-23T12:21:35Z
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26932
dc.sourceIIOimport
dc.titleOrigin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewyes
dc.source.beginpage43504
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume108
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/108/4/10.1063/1.4940685
imec.availabilityPublished - imec


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