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Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBisi, Davide
dc.contributor.authorRossetto, Isabella
dc.contributor.authorWu, Tian-Li
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-23T12:45:55Z
dc.date.available2021-10-23T12:45:55Z
dc.date.issued2016
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26999
dc.sourceIIOimport
dc.titleTrapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage151
dc.source.endpage157
dc.source.journalMicroelectronics Reliability
dc.source.volume58
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271415302389
imec.availabilityPublished - imec


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