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Self-aligned double patterning process for subtractive Ge Fin fabrication at 45-nm pitch

dc.contributor.authorMilenin, Alexey
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T12:51:07Z
dc.date.available2021-10-23T12:51:07Z
dc.date.issued2016
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27012
dc.sourceIIOimport
dc.titleSelf-aligned double patterning process for subtractive Ge Fin fabrication at 45-nm pitch
dc.typeJournal article
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.source.peerreviewyes
dc.source.beginpage64
dc.source.endpage67
dc.source.journalThin Solid Films
dc.source.volume602
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0040609015007968
imec.availabilityPublished - imec


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