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Transport properties of chemically synthesized MoS2. Dielectric effects and defects scattering

dc.contributor.authorMongillo, Massimo
dc.contributor.authorChiappe, Daniele
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorPerucchini, Marta
dc.contributor.authorManfrini, Mauricio
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-23T12:59:31Z
dc.date.available2021-10-23T12:59:31Z
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27035
dc.sourceIIOimport
dc.titleTransport properties of chemically synthesized MoS2. Dielectric effects and defects scattering
dc.typeJournal article
dc.contributor.imecauthorMongillo, Massimo
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorManfrini, Mauricio
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecMongillo, Massimo::0000-0002-6475-6320
dc.contributor.orcidimecManfrini, Mauricio::0000-0003-3609-2042
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage23
dc.source.journalApplied Physics Letters
dc.source.issue23
dc.source.volume109
dc.identifier.urlhttp://aip.scitation.org/doi/full/10.1063/1.4971775
imec.availabilityPublished - open access


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