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GR-noise characterization of Ge pFinFETs with STI first and STI last process

dc.contributor.authorOliveira, Alberto V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao A
dc.contributor.authorLanger, Robert
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T13:22:03Z
dc.date.available2021-10-23T13:22:03Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27093
dc.sourceIIOimport
dc.titleGR-noise characterization of Ge pFinFETs with STI first and STI last process
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1092
dc.source.endpage1095
dc.source.journalIEEE Electron Device Letters
dc.source.issue9
dc.source.volume37
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7523933&refinements%3D4226070420%26filter%3DAND%28p_IS_Number%3A43579
imec.availabilityPublished - open access


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