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A five-layer thin film MCM-Si design using oxynitride dielectrics

dc.contributor.authorLernout, Jo
dc.contributor.authorVanfleteren, Jan
dc.contributor.authorVan Calster, Andre
dc.contributor.authorSchols, G.
dc.date.accessioned2021-09-30T12:33:50Z
dc.date.available2021-09-30T12:33:50Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2718
dc.sourceIIOimport
dc.titleA five-layer thin film MCM-Si design using oxynitride dielectrics
dc.typeJournal article
dc.contributor.imecauthorVanfleteren, Jan
dc.contributor.imecauthorVan Calster, Andre
dc.contributor.orcidimecVanfleteren, Jan::0000-0002-9654-7304
dc.source.peerreviewno
dc.source.beginpage39
dc.source.endpage42
dc.source.journalMicroelectronics International (Hybrid Circuits)
dc.source.issue1
dc.source.volume15
imec.availabilityPublished - imec


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