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Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

dc.contributor.authorRuzzarin, Maria
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRossetto, Isabella
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorStoffels, Steve
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-23T14:28:03Z
dc.date.available2021-10-23T14:28:03Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27250
dc.sourceIIOimport
dc.titleEvidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress
dc.typeJournal article
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1415
dc.source.endpage1417
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume37
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7565474/
imec.availabilityPublished - imec


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