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Extraction of the defect distributions in DRAM capacitor using I–V and C–V sensitivity maps

dc.contributor.authorSereni, Gabriele
dc.contributor.authorLarcher, Luca
dc.contributor.authorKaczer, Ben
dc.contributor.authorPopovici, Mihaela Ioana
dc.date.accessioned2021-10-23T14:46:10Z
dc.date.available2021-10-23T14:46:10Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27291
dc.sourceIIOimport
dc.titleExtraction of the defect distributions in DRAM capacitor using I–V and C–V sensitivity maps
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecPopovici, Mihaela Ioana::0000-0002-9838-1088
dc.source.peerreviewyes
dc.source.beginpage1280
dc.source.endpage1283
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume37
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7544449
imec.availabilityPublished - imec


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