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Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers

dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-23T14:51:26Z
dc.date.available2021-10-23T14:51:26Z
dc.date.issued2016-03
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27303
dc.sourceIIOimport
dc.titleDesign requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
dc.typeJournal article
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpageQ140
dc.source.endpageQ143
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue5
dc.source.volume5
dc.identifier.url10.1149/2.0301605jss
imec.availabilityPublished - imec


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