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Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates

dc.contributor.authorSu, Jie
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWellekens, Dirk
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorArif, Ronald
dc.contributor.authorPapasouliotis, George
dc.date.accessioned2021-10-23T15:16:50Z
dc.date.available2021-10-23T15:16:50Z
dc.date.issued2016
dc.identifier.issn0361-5235
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27357
dc.sourceIIOimport
dc.titleGrowth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
dc.typeJournal article
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage6346
dc.source.endpage6354
dc.source.journalJournal of Electronic Materials
dc.source.issue12
dc.source.volume45
dc.identifier.urlhttp://rd.springer.com/article/10.1007/s11664-016-5029-9
imec.availabilityPublished - open access


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