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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors

dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-01T08:29:17Z
dc.date.available2021-10-01T08:29:17Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2742
dc.sourceIIOimport
dc.titleImpact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2444
dc.source.endpage2446
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume73
imec.availabilityPublished - open access


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