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Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

dc.contributor.authorVinicius de Oliveira, Alberto
dc.contributor.authorAgopian, Paula Ghedini Der
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T16:52:11Z
dc.date.available2021-10-23T16:52:11Z
dc.date.issued2016
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27551
dc.sourceIIOimport
dc.titleComparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage124
dc.source.endpage129
dc.source.journalSolid-State Electronics
dc.source.volume123
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110116300351
imec.availabilityPublished - imec


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