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Introduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling with larger memory window

dc.contributor.authorWoo, Jiyong
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHwang, Hyunsang
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGoux, Ludovic
dc.date.accessioned2021-10-23T17:15:20Z
dc.date.available2021-10-23T17:15:20Z
dc.date.issued2016
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27596
dc.sourceIIOimport
dc.titleIntroduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling with larger memory window
dc.typeJournal article
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage163
dc.source.endpage166
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.issue3
dc.source.volume4
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7400894
imec.availabilityPublished - open access


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