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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

dc.contributor.authorWu, Tian-Li
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMarcon, Denis
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T17:20:19Z
dc.date.available2021-10-23T17:20:19Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27606
dc.sourceIIOimport
dc.titleToward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1853
dc.source.endpage1860
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume63
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7440814
imec.availabilityPublished - open access


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