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MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVenegas, Rafael
dc.contributor.authorVrancken, Evi
dc.contributor.authorFavia, Paola
dc.contributor.authorVanderheyden, Annelies
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLanger, Robert
dc.date.accessioned2021-10-23T17:52:47Z
dc.date.available2021-10-23T17:52:47Z
dc.date.issued2016
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27666
dc.sourceIIOimport
dc.titleMOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
dc.typeJournal article
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.source.peerreviewyes
dc.source.beginpage311
dc.source.endpage316
dc.source.journalPhysica Status Solidi C
dc.source.issue5_6
dc.source.volume13
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201510280/abstract
imec.availabilityPublished - imec


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