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Influence of germanium content on the degradation of strained Si1-xGex epitaxial diodes by electron irradiation

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T12:44:43Z
dc.date.available2021-09-29T12:44:43Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/278
dc.sourceIIOimport
dc.titleInfluence of germanium content on the degradation of strained Si1-xGex epitaxial diodes by electron irradiation
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage183
dc.source.endpage193
dc.source.journalPhysica Status Solidi A: Applied Research
dc.source.volumeA143
imec.availabilityPublished - open access


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