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Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory

dc.contributor.authorCapogreco, Elena
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorLisoni, Judit Gloria
dc.contributor.authorArreghini, Antonio
dc.contributor.authorKunert, Bernardette
dc.contributor.authorGuo, Weiming
dc.contributor.authorTan, Chi Lim
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-24T03:15:38Z
dc.date.available2021-10-24T03:15:38Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27965
dc.sourceIIOimport
dc.titleFeasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
dc.typeJournal article
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage130
dc.source.endpage136
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7778121
imec.availabilityPublished - open access


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