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dc.contributor.authorCelano, Umberto
dc.contributor.authorOp de Beeck, Jonathan
dc.contributor.authorClima, Sergiu
dc.contributor.authorLuebben, Michael
dc.contributor.authorKoenraad, Paul
dc.contributor.authorGoux, Ludovic
dc.contributor.authorValov, Ilia
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-24T03:21:13Z
dc.date.available2021-10-24T03:21:13Z
dc.date.issued2017
dc.identifier.issn1944-8244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27991
dc.sourceIIOimport
dc.titleDirect probing of the dielectric scavenging-layer interface in oxide filamentary-based valence change memory
dc.typeJournal article
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorOp de Beeck, Jonathan
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecOp de Beeck, Jonathan::0000-0003-3471-2156
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage10820
dc.source.endpage10824
dc.source.journalACS Applied Materials & Interfaces
dc.source.issue12
dc.source.volume9
dc.identifier.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.6b16268
imec.availabilityPublished - open access


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