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Origin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors

dc.contributor.authorde Jamblinne de Meux, Albert
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-24T03:49:23Z
dc.date.available2021-10-24T03:49:23Z
dc.date.issued2017
dc.identifier.issn0953-8984
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28129
dc.sourceIIOimport
dc.titleOrigin of the apparent delocalization of the conduction band in high mobility amorphous semiconductors
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage255702
dc.source.journalJournal of Physics: Condensed Matter
dc.source.issue25
dc.source.volume29
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-648X/aa608c
imec.availabilityPublished - imec


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