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Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

dc.contributor.authorGuo, Weiming
dc.contributor.authorMols, Yves
dc.contributor.authorBelz, Jürgen
dc.contributor.authorBeyer, Andreas
dc.contributor.authorVolz, Kerstin
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLanger, Robert
dc.contributor.authorKunert, Bernardette
dc.date.accessioned2021-10-24T05:17:51Z
dc.date.available2021-10-24T05:17:51Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28435
dc.sourceIIOimport
dc.titleAnisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
dc.typeJournal article
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.source.peerreviewyes
dc.source.beginpage25303
dc.source.journalJournal of Applied Physics
dc.source.issue2
dc.source.volume122
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.4991481
imec.availabilityPublished - imec


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